Thermoluminescence properties of SrAl/sub 2/O/sub 4/:Eu sputtered films with long phosphorescence
説明
SrAl/sub 2/O/sub 4/ activated with Eu, one of new long phosphorescent materials with high brightness, was deposited on Si substrates using an RF sputtering technique with facing targets. The photoluminescence (PL) was not observed for the as-deposited SrAl/sub 2/O/sub 4/:Eu films. However, a PL peak at about 520 nm was observed after annealing in a reducing H/sub 2/+Ar gas. The thermoluminescence (TL) measurements were carried out, and the lifetimes of the phosphorescence were obtained from the peaks. TL spectra in higher temperature region which contribute for the long phosphorescence, were examined by the partial heating technique to evaluate the distributed trap depths and lifetimes. The results in this work are useful for the development of phosphors.
収録刊行物
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- Proceedings of 1998 International Symposium on Electrical Insulating Materials. 1998 Asian International Conference on Dielectrics and Electrical Insulation. 30th Symposium on Electrical Insulating Materials (IEEE Cat. No.98TH8286)
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Proceedings of 1998 International Symposium on Electrical Insulating Materials. 1998 Asian International Conference on Dielectrics and Electrical Insulation. 30th Symposium on Electrical Insulating Materials (IEEE Cat. No.98TH8286) 51-54, 2002-11-27
Inst. Electr. Eng. Japan