<title>Mode-Controlled Galnasp-Inp Long Wavelength Lasers</title>

GaInAsP/InP lasers with wavelengths of 1.0-1.7µ1-7 have been intensively developed because the optical fibers have their minimum transmission losses in this wavelength region8-9. The transverse mode control obtained in index-guiding structures is very important to im-prove lasing properties, such as modulation linearity, and longitudinal mode behavior as justified experimentally and theoretically. 10-15 Recently single transverse and longitudi-nal mode operation of GaInAsP/InP lasers with index-guiding effect have been realized in various structures.18-28 Newly, 1.6pm wavelength GaInAsP/InP buried heterostructure (BH) lasers have been operated at room temperature in CW condition.21, 22 We also presented, thus far, other types of novel mode-controlled GaInAsP/InP lasers.19,28 In this paper, three types of mode controlled GaInAsP/InP lasers are discussed: (1) buried heterostructure lasers with 1.6μm wavelength, (2) mesa substrate buried hetero-structure (MSB) lasers and (3) terraced substrate (TS) lasers with 1.3-μm wavelength. Specially, the lasing characteristics of 1.6-μm wavelength BH lasers are given. In these de-vices threshold currents as low as 28 mA and differential quantum efficiencys of 43% under room temperature CW condition could be obtained.© (1981) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.