Hrtem Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-k Gate Dielectrics
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<jats:title>ABSTRACT</jats:title><jats:p>The effects of several rare earth oxide on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics were examined. The width of the hysteresis window of La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> stabilized ZrO<jats:sub>2</jats:sub> (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> stabilized ZrO<jats:sub>2</jats:sub> (ScSZ) gate dielectric was 1.4V HRTEM analysis indicated that the growth of SiO<jats:sub>2</jats:sub> interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO<jats:sub>2</jats:sub> gate dielectric doped with rare earth oxide composed of larger ionic radius cation.</jats:p>
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- MRS Proceedings
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MRS Proceedings 747 2002-01-01
Springer Science and Business Media LLC