Carrier traps in vapor-deposited poly-p-xylylene films
説明
Carrier traps in vapor-deposited PPX were discussed from the analyses of X-ray induced TSC and TL. There were five TSC peaks and two TL peaks in the temperature range of −180°C to 150°C. The lower two TSC and two TL peaks were related to the local mode relaxations of CH2 and phenylene units. One of the remaining TSC peaks was considered to be associated with the glass transition and the others had nothing to do with the molecular motions. These two peaks were significantly affected by the crystallographic transformation which could be initiated by thermal annealing at 230°C.
収録刊行物
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- Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1980
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Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1980 260-265, 1980-10-01
IEEE