Cavity length dependence on lasing characteristics of double-capped QDs laser
説明
Cavity length dependence on lasing characteristics was obtained in the p-modulation doped double-capped InAs QDs laser on the InP substrate at 1.65μm wavelength. Stranski-Krastanov InAs QDs was grown low-pressure MOVPE, and employed the p-modulation doping in the capping layer during the double-capped process. Lasing characteristics was obtained under pulsed injection current at room temperature. We have shown the lasing wavelength and threshold current dependent on the cavity length of the laser.
収録刊行物
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- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
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2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) 1-2, 2015-08-01
IEEE