Interface electronic structure in MnAs on GaAs (001) studied by <i>in situ</i> photoemission spectroscopy
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説明
<jats:p>We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 89 2006-07-10
AIP Publishing
