Effect of V<sub>sub</sub> and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET” and Proposal of CMOS without V<sub>sub</sub> Bias
説明
We report the effect of the substrate bias (V sub ) and the positive charge (Q ox ) in the buried oxide (BOX) on P-channel / N-channel super steep subthreshold slope (SS) “PN Body-Tied (PNBT) SOI-FET”. The Q ox in the BOX was evaluated with the specific test device. Removing the effect of the Q ox and realizing the super steep SS, the necessity of V sub, especially on P-channel, was systematically confirmed with measurements and simulations. It was founded out that the positive feedback by PNBT contributes to making the barrier height for reducing the leakage current and realizing the super steep SS, although the difference of the static barrier height is small only with V sub and the Q ox . We also propose modification on PNBT structure for realizing CMOS without V sub bias.
収録刊行物
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- 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) 1-3, 2019-10-14
IEEE