Structural properties of Eu doped GaN and its relation with luminescence properties
この論文をさがす
説明
<jats:title>ABSTRACT</jats:title><jats:p>The Structural properties of Europium (Eu) doped GaN and its relation with optical properties were studied. Concentration quenching of the intensity of the Eu related luminescence observed when Eu concentration exceeds 3 at.%. In situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were carried out to study this luminescence quenching and it was discovered that there is close relationship between the luminescence intensity at 622 nm and structural properties. The cause of the concentration quenching is likely related to the polycrystalline growth as well as to the EuN formation.</jats:p>
収録刊行物
-
- MRS Proceedings
-
MRS Proceedings 831 2004-01-01
Springer Science and Business Media LLC