Temporal control of radicals for high crystallinity of microcrystalline silicon films in UHF SiH/sub 4//H/sub 2/ pulse-modulated plasma CVD
説明
In this study, we have investigated the relation between the crystallinity of microcrystalline silicon (/spl mu/c-Si) films and the reaction kinetics of radicals in pulse-modulated plasma CVD employing technique of temporal radical control.
収録刊行物
-
- 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers.
-
2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. 224-225, 2003-08-27
Japan Soc. Appl. Phys