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Description
Transmission electron microscope (TEM) observation showed that a 25 nm thick intermediate layer was formed at the diamond/Si bonding interface without annealing, the intermediate layer thickness decreased with the annealing temperature. No cracking even in nanometer scale occurred even after high-temperature annealing at 800 °C.
Journal
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- 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
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2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 3-3, 2019-05-01
IEEE