La-based oxides for high-k gate dielectric application
説明
Thermal stability of rare earth oxides La2O3/Y2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO 2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer
収録刊行物
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- 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
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2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings 408-411, 2006-01-01
IEEE