LF-band noise in MOSFET in low-power operation

DOI

Search this article

Description

Noise performance of a commercial MOSFET was evaluated for the amplifier application in LF-band. The level of 1/f noise referred to the gate was about -126 dbV/Hz at 1 Hz and was proportional to f -0.9 . At 100 kHz noise was white and was equivalent to the thermal noise from 1 kΩ and 100 kΩ at the drain current of 100 μA and 1 μA, respectively. 2SK1771 is acceptable as the amplifying device connected to a tuning circuit whose resonant impedance is more than the values stated above.

Journal

Details 詳細情報について

Report a problem

Back to top