Thin Ag film formation on thin SOI substrate
説明
We show that much better results for forming a thin Ag film on an insulator can be obtained by using the direct continuous current flowing method (CCFM). This method is as follows: while forming a film on a substrate with a conventional deposition method, direct constant current is made to flow on the film via small electrodes. We report the results of using CCFM to form a thin Ag film onto an SiO/sub x/ substrate and make a comparison with the ion beam deposition method.
収録刊行物
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- 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)
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2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) 149-152, 2002-11-13
IEEE