Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

説明

We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.

収録刊行物

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