- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
1.3-1.5 μm wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates
Description
High lateral density (~10-11 cm-2) quantum dot (QD) structures are self-formed by growing the (GaAs)2(InAs)2 short period superlattices (SLs) on InP(411)A substrates by gas source MBE. QD structures are well aligned along two perpendicular directions. Multilayer quantum dot structures sandwiched with InP barrier layers showed strong photoluminescence emission with wavelengths of 1.3 - 1.5μm depending on the SL period.
Journal
-
- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
-
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) 366-369, 2002-11-13
IEEE