Transient four wave mixing experiments on GaN
説明
<jats:p>We present four wave mixing experiments on GaN. We find an intrinsic homogeneous broadening of the A-exciton of 1.67 meV. A pronounced beating with a period of 0.52 ps is observed at excitation energies between the A- and the B-exciton and corresponds to an energy splitting of 7.98 meV of A- and B-exciton.</jats:p>
収録刊行物
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- MRS Internet Journal of Nitride Semiconductor Research
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MRS Internet Journal of Nitride Semiconductor Research 2 1997-01-01
Springer Science and Business Media LLC
