Si bicrystal single-electron FETs
説明
Si single-electron (or single-hole) tunneling PETs containing a network of screw dislocations, which is intentionally formed as a periodic potential source, has been studied focusing on effects of thickness difference of the facing Si layers, i.e., upper and lower top Si layers. As a result, we have found that moderately balanced thicknesses between the layers provide significantly prominent single-electron characteristics.
収録刊行物
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- 2008 IEEE Silicon Nanoelectronics Workshop
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2008 IEEE Silicon Nanoelectronics Workshop 1-2, 2008-06-01
IEEE
