Formation of Ge Nanocrystals Passivated with Si by Gas Evaporation of Si and Ge

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<jats:title>Abstract</jats:title><jats:p>Two methods are employed in the gas evaporation technique to form Ge nanocrystals with the Si-passivated surface. One uses one boat with a SiGe alloy as a source, and the other uses two boats each with Si and Ge. As a result of characterization by the x-ray diffraction (XRD) measurement, Raman scattering and x-ray photoelectron spectroscopy (XPS), it is found that Ge nanocrystals with the Si-passivated surface were formed by coevaporation of Si and Ge from two boats, while SiGe alloy nanocrystals were formed by evaporation of the Si-Ge alloy source from one boat.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 638 2000-01-01

    Springer Science and Business Media LLC

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