Quantum dots in a vertical cavity for all-optical switching devices

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Self-assembled InAs/GaAs quantum dots (QD) incorporated in a GaAs/AlAs Fabry-Perot cavity have been employed as an optical nonlinear source for vertical-reflection type switches. Switching times of 32∼80 ps have been achieved in this novel structure. All-optical switching using excited QD states shows better performance due to fast carrier relaxation between QD energy states. These results demonstrate potential application of QD materials in ultra-fast all-optical switching devices.

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