Raman and Ft‐Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium‐Nitrogen Alloys
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<jats:title>Abstract</jats:title><jats:p>A series of hydrogenated amorphous germanium‐nitrogen (a‐GeN:H) alloys have been synthesized by plasma enhanced chemical vapor deposition. The structure and its thermal stability have been investigated by means of Raman Scattering and Fourier Transform Infrared techniques. It was found that the structure is changed from Ge‐Ge‐like to Ge‐N‐like when the nitrogen content x in a‐Ge<jats:sub>1‐x</jats:sub>N<jats:sub>x</jats:sub>:H is larger than 0.3. Some a‐GeN:H alloys were annealed for 30min at different temperature and it is shown that the film structural stability is significantly improved compared with pure a‐Ge:H film.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 446 1996-01-01
Springer Science and Business Media LLC
