Mechanism of composition change in sputter deposition of barium ferrite films with sputtering gas pressure

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<jats:p>In this study, we used computer simulation to investigate changes in the composition of hexagonal barium ferrite films with sputtering gas pressure obtained by the sputter-deposition processes. The iron content in the film deposited by facing target sputtering increased as the sputtering gas pressure increased and reached a maximum value at a certain gas pressure. These changes in the film composition were explained as follows: sputtered particles scatter when they collide with sputtering gas atoms, and this scattering changes the ratio of the particles reaching the substrate. When the substrate was located to the side of the target, as in a facing target sputtering system, this scattering resulted in an increase in the amount of sputtered particles arriving at the substrate, although too much scattering caused the amount to decrease. When a magnetron sputtering system is used for the film preparation, this gas scattering leads to a decrease in the amount of sputtered particles arriving at the substrate which is located opposite the target. Since this gas scattering depends significantly on the atomic mass of the sputtered particles, the gas pressure dependence of the amount of iron atoms arriving differs considerably from that of the amount of barium atoms arriving. This difference leads to the changes in film composition.</jats:p>

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