Charge transfer of n-type GaN photoelectrolysis in HCl solution for H<sub>2</sub> gas generation at a counterelectrode

DOI

Search this article

Description

<jats:title>ABSTRACT</jats:title><jats:p>In order to clarify the charge transfer characteristics for H<jats:sub>2</jats:sub> generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The flatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H<jats:sub>2</jats:sub> generation. The carrier concentration in n-type GaN also affects the photocurrent.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 885 2005-01-01

    Springer Science and Business Media LLC

Details 詳細情報について

Report a problem

Back to top