High-performance gain-coupled distributed-feedback semiconductor lasers with absorptive gratings
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説明
Improved characteristics of gain-coupled distributed feedback (DFB) semiconductor lasers are obtained by optimizing the duty cycle of the absorptive grating and using an absorptive conduction-type-inverted grating. Low threshold current cw operation is achieved at 10 mA lower than lasers without conduction-type-inverting. Furthermore, improved linear oscillation and a narrow linewidth are demonstrated. For gain-coupled DFB semiconductor lasers based on absorptive gratings, ultralow chirping operation under gain switching conditions is obtained for the first time.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 1979 313-, 1993-05-11
SPIE