GaInAsP/InP multiple-quantum-wire lasers with narrow (14 nm) quantum-wire structure

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GaInAsP/InP strain-compensated 5-stacked compressively strained quantum-wire lasers with the wire width of 14 nm in the period of 80 nm were realized by electron beam lithography, CH/sub 4//H/sub 2/-reactive ion etching and two-step organometallic vapor-phase-epitaxial growth. By adopting completely strain-compensating barriers, a smaller energy blue shift at the peak wavelength in spontaneous emission spectra was obtained than that in the case of partial strain-compensation, indicating the suppression of strain relaxation in the active regions and the surrounding InP layers. A lateral quantum confinement effect could be observed via sharper shape of the spontaneous emission spectrum than that of quantum-film lasers in the higher transition energy region. Threshold current density of 1.46 kA/cm/sup 2/ and differential quantum efficiency of 39% were also obtained under a pulsed condition at room temperature.

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