Rapid Optimization of Pentacene Buffer for Rubrene Thin Film Transistors by Using Combinatorial MBE

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<jats:title>Abstract</jats:title><jats:p>By means of insertion of thin pentacene buffer layer, we have succeeded in the fabrication of highly <jats:italic>c</jats:italic>-axis oriented rubrene (5,6,11,12-tetraphenylnaphthacene) thin films and their field effect transistors (FETs). In the case without pentacene buffers, only amorphous rubrene films were obtained and their FETs did not show operation. After optimization of pentacene buffer by using combinatorial thickness-gradient method, we obtained the crystalline rubrene thin films and their FETs showed <jats:italic>p</jats:italic>-type operation with a mobility of 0.05 cm<jats:sup>2</jats:sup>/V·s and an on-off ratio of 106.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 894 2005-01-01

    Springer Science and Business Media LLC

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