On the Beam Loading of Induction Voltage Modulator

DOI

Search this article

Description

Effects of beam loading on the induction voltage modulator have been experimentally evaluated using a FET (field effect transistor) based driving pulser and a resistive secondary circuit. The core materials used in this study, are made of a nano-crystalline alloy (Finemet) and a Co-amorphous alloy. The voltage modulation is evaluated as a function of magnetization rate dB/dt, magnetization level of the magnetic material and the current rise-rate of the secondary loop (dI/dt). Experimental results indicate that the voltage modification depend not only on the magnetization rate but also on the initial state of the magetic materials and also flux swing B from it. These results indicate that the response of the modulator against the loading depends on the transient magnetic-domain motion in the core materials.

Journal

Details 詳細情報について

Report a problem

Back to top