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A low on-resistance 60 V MOSFET high side switch and a 30 V npn transistor based on 5 V BiCMOS process
Description
This paper present a 60 V MOSFET and a 30 V npn transistor based on a 5 V BiCMOS process. The proposed MOSFET on n-epi/n+ buried layer can be operated as high side switch, and can be fabricated with a 30 V npn. The predicted specific on-resistance of this MOSFET is as low as 105 m/spl Omega//spl middot//spl mu/m/sup 2/. These device structures are suitable for fabrication by conventional BiCMOS process.
Journal
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- Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting
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Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting 151-154, 2002-11-22
IEEE
