Mid-gap electron traps (EL2 family) in GaAs
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説明
Abstract Peculiar properties of mid-gap levels in GaAs (EL2 family) are summarized, and to explain these properties a new model for EL2 family, arsenic aggregates, is presented and discussed.
収録刊行物
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- Microelectronic Engineering
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Microelectronic Engineering 2 137-143, 1984-10-01
Elsevier BV
