Corrigendum to: “High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy” [Superlatt. Microstruct. 40 (2006) 214–218]

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In this paper, the authors reported that high-quality InAlN/GaN heterostructure was successfully grown by MOVPE. They had estimated the composition of InAlN by only X-ray diffraction. However, recent material analyses, such as secondary ion mass spectroscopy, Auger Electron Spectroscopy and Rutherford Backscattering Spectrometry, revealed that a large amount of Ga atomswere incorporated into the material. The authors reported the fabrication of InAlN with the Al content from 0.78 to 0.89. However, actual materials are In-doped AlGaN with the Al content from 0.09 to 0.54 and AlGaInN with the Al content from 0.66 to 0.8, the Ga content from 0.2 to 0.12 and the In content from 0.14 to 0.08, respectively. Reported electrical properties were not concerned with InAlN/GaN but with AlGa(In)N/GaN heterostructure. From those results, the authors regret to state that their reported results are not on InAlN but on Indoped AlGaN or AlGaInN. The authors are now intensively investigating the mechanism of Ga atoms incorporating it into the growing material.

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