STM Study of Initial Growth of Titanium Silicide on Si(III)

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<jats:title>ABSTRACT</jats:title><jats:p>The nucleation and initial growth of titanium suicide on Si(111)7×7 surface has been studied using the scanning tunneling microscopy(STM) in ultrahigh vacuum. At room temperature Ti atoms react with Si atoms and preferentially adsorb on faulted half of the 7×7 surface. By annealing at 600°C, islandlike structures(amorphous titanium suicide) and striplike structures(crystalline titanium suicide) are formed. Annealing at 700°C drives the growth of striplike structures from islandlike structures. The striplike structures grow parallel to specific directions on the 7×7 surface.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 466 1996-01-01

    Springer Science and Business Media LLC

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