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P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment
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Description
<jats:p>This work presents an all‐solution approach to oxide TFT fabrication through the photo‐functionalization of InZnO using photo‐assisted methods. We fabricated high‐performance all‐solution devices using UV and excimer laser treatment which are competitive with vacuum‐processed TFTs. This work is a big step towards large‐area manufacture of low‐cost electronics.</jats:p>
Journal
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- SID Symposium Digest of Technical Papers
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SID Symposium Digest of Technical Papers 51 1350-1353, 2020-08-01
Wiley
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Details 詳細情報について
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- CRID
- 1874242817628255488
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- ISSN
- 21680159
- 0097966X
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- Data Source
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- OpenAIRE