Electroluminescent Devices Based On Polycrystalline Silicon Films For Large-Area Applications

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<jats:title>Abstract</jats:title><jats:p>It is shown that porous polycrystalline Si (PPS) diodes operate as light-emitting diodes (LEDs) with efficiencies comparable to conventional porous silicon (PS) diodes fabricated on singlecrystalline substrates. Judging from the electroluminescence (EL) characteristics such as emission spectra, diode current dependence of EL intensity, and its temperature dependence, the common EL mechanism seems to exist in PPS and PS diodes. Observed similarity in the photoluminescence (PL) properties between PPS and PS is consistent with this hypothesis. The capability of a poly-Si thin film transistor as a driver of PPS-LED is also demonstrated.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 486 1997-01-01

    Springer Science and Business Media LLC

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