Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE
説明
The optical properties of InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) grown by MOVPE are investigated. The FACQW phase modulator is fabricated and its large phase shift is successfully observed.
収録刊行物
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- OECC/ACOFT 2008 - Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology
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OECC/ACOFT 2008 - Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology 1-3, 2008-07-01
IEEE