Ar Implantation-Induced Quantum Dot Intermixing Technique for 1550 nm-Band Highly Stacked QD Photonic Integrated Circuit
説明
We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.
収録刊行物
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- Conference on Lasers and Electro-Optics
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Conference on Lasers and Electro-Optics SM4R.5-, 2016-01-01
OSA
