Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN
説明
<jats:p>A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional O<jats:sub>P</jats:sub> donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.</jats:p>
収録刊行物
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- MRS Internet Journal of Nitride Semiconductor Research
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MRS Internet Journal of Nitride Semiconductor Research 4 (S1), 514-519, 1999
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