Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
説明
<jats:p>We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×10<jats:sup>10</jats:sup> cm<jats:sup>−2</jats:sup> down to 2×10<jats:sup>9</jats:sup> cm<jats:sup>−2</jats:sup> by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al<jats:sub>0.38</jats:sub>Ga<jats:sub>0.62</jats:sub>N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.</jats:p>
収録刊行物
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- MRS Internet Journal of Nitride Semiconductor Research
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MRS Internet Journal of Nitride Semiconductor Research 4 852-857, 1998-01-01
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