Focused-ion-beam (FIB) etching of quartz and carbon for Levenson mask repair

この論文をさがす

説明

The Etch-back and laser-explosion process was proposed and reported for Levenson mask repair before. If convex defects and leveling film were etched by physical sputtering and remaining leveling film was removed by laser explosion in the etch-back and laser-explosion process, quartz (Qz) substrate was over-etched because the Ga implanted layer of Qz substrate was also removed by the laser explosion due to the transmittance decrease of the Ga implanted layer. In this paper, gas assisted etching with the mixture of XeF2 and O 2 was applied to the etch-back and laser-explosion process. The coincident etching rate of Qz (phase shifter) with C film was obtained, which is an indispensable requirement for the etch-back process. The optical transmittance of Qz substrate after the repair was 95% for the light of 250nm wavelength. The transmittance was sufficient to avoid over-etching of Qz substrate.

収録刊行物

詳細情報 詳細情報について

  • CRID
    1874242817770936192
  • DOI
    10.1117/12.277284
  • ISSN
    0277786X
  • データソース種別
    • OpenAIRE

問題の指摘

ページトップへ