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Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors
Description
III-nitride VCSELs are fabricated by removing SiC substrate from the Ill-nitride cavity, and subsequent wafer bonding of the cavity and DBRs. Low-threshold lasing action in InGaN VCSELs with dielectric DBRs is observed at room temperature by optical pumping.
Journal
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- CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671)
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CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) 1 343-343, 2004-07-08
IEEE