Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

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<jats:title>Abstract</jats:title><jats:p>The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 892 2005-01-01

    Springer Science and Business Media LLC

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