Growth of ZnO Thin Films on Sapphire Substrates by ECR-Assisted MBE

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<jats:title>ABSTRACT</jats:title><jats:p>Epitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> with in-plane alignment of [<jats:overline>1</jats:overline>100]ZnO//[<jats:overline>2</jats:overline>110]Al<jats:sub>2</jats:sub>O<jats:sup>3</jats:sup>, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 474 1997-01-01

    Springer Science and Business Media LLC

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