Study on Relationship of the Material Removal Amount and the Increase in Abrasive Nanoparticle Size during Si-CMP
説明
Chemical Mechanical Polishing (CMP) of silicon wafer is indispensable for providing the substrate used in manufacturing of semiconductor device. However, the CMP process has many parameters, such as polishing pressure, platen/carrier rotational speed, polishing pad characteristics, chemical solution/abrasive in polishing slurry. In these parameters, abrasive particles in the slurry have both mechanical and chemical actions. To enhance the CMP process efficiency, we have been studied the relationship between the Material Removal Amount (MRA) and the increase of abrasive particle size during CMP. In this report, the colloidal silica abrasive nanoparticle sizes of 20 nm and 55 nm were used for polishing the Silicon wafers by a CMP machine, which is installed a slurry pool. A dynamic light scattering (DLS) spectra measures the increase in abrasive nanoparticle sizes. The silicon particle size after CMP process were direct proportion with MRA of Si-wafer was polished.
収録刊行物
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- 2018 Third International Conference on Engineering Science and Innovative Technology (ESIT)
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2018 Third International Conference on Engineering Science and Innovative Technology (ESIT) 1-3, 2018-04-01
IEEE