A reverse base current under high level injection and its influence on BiCMOS circuit
説明
The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage. >
収録刊行物
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- International Electron Devices Meeting 1991 [Technical Digest]
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International Electron Devices Meeting 1991 [Technical Digest] 865-868, 2002-12-09
IEEE
