Interface Morphology of Metallic Multilayers by Means of Deposition Simulation
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<jats:title>ABSTRACT</jats:title><jats:p>Growth of a Co/Cu/Co multilayer is investigated by molecular-dynamics simulation. The interactions between Co and Cu atoms are calculated in terms of the generic-embedded atom method potential. It is confirmed that two-dimensional island growth of Cu atoms on the Co substrate occurs in the simulations. The roughnesses of the surface and the interface are evaluated by means of the standard deviations of the heights of the surface and interface atoms. Intermixing atoms between the layers are also counted. We conclude that there exists an optimum combination of the incident energies of deposited Cu and Co atoms which minimizes both the roughness and intermixing of the interface.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 962 2006-01-01
Springer Science and Business Media LLC