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Modification of field emitter array (FEA) tip shape by focused ion beam irradiation
Description
Tip shapes of Si field emitter arrays (FEAs), fabricated by a conventional dry etching process, have successfully bean modified by focused ion beam (FIB) irradiation to obtain a sharp cone shape. Flat-topped Si tips could be sharpened by localized sputtering using FIBs for a short time.
Journal
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- IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)
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IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) 52-55, 2002-11-19
IEEE
