Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

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We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In 0.22 Ga 0.78 As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.

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