2μm thin film c-Si cells on near-Lambertian Al2O3 substrates

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Abstract Near-Lambertian Al 2 O 3 substrates, which have the reflectivity of almost 100% and superior optical diffusivity, were newly developed by the doctor-blade technique and 2 μm thin film c-Si cells with the large short-circuit current J SC of 15.6 mA/cm 2 (photocurrent J ph of 17.5 mA/cm 2 ) were fabricated on the substrates. These cells were prepared by ECR plasma chemical vapor deposition, electron-beam recrystallization, conventional phosphorus diffusion and ITO metallization. The optical confinement in such thin film c-Si cells on the diffuse–reflective substrates was experimentally and theoretically investigated. The theoretical computation presented a strong possibility of higher J SC beyond 30 mA/cm 2 .

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