Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO

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Description

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric BaTiO

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Details 詳細情報について

  • CRID
    1874243915462944896
  • ISSN
    20452322
  • PubMed
    32612212
  • Data Source
    • OpenAIRE

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