Study on Ion Beam Induced Effects in Sputter Depth Profiling

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Bibliographic Information

Title
Study on Ion Beam Induced Effects in Sputter Depth Profiling
Other Title
  • 深さ方向分析におけるイオンビーム照射誘起効果に関する研究
Author
李, 炯益
Alias Name
  • イー, ヒョンイク
University
大阪大学
Types of degree
博士（工学）
Grant ID
甲第06416号
Degree year
1998-03-25

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Description

博士論文

資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
博士論文

Table of Contents

Contents

Preface and Acknowledgments

Chapter1.Depth Profiling Based on Sputtering

1.1 Introduction

1.2 Sputter Depth Profiling

1.3 Theoretical Approach

1.4 Experimental Approach

1.5 Main Purposes of This Thesis

Chapter2.Auger Depth Profiling by Monte Carlo Simulation Approach

2.1 Introduction

2.2 Basic Models of Monte Carlo Simulation

2.3 Auger Depth Profiling of AlAs/GaAs Multilayered System

2.4 Summary

Chapter3.Instrumentation

3.1 Introduction

3.2 Measurement Systems

3.3 Construction of Apparatus

3.4 Summary

Chapter 4.Auger Depth Profiling of a GaAs/AlAs Superlattice Structure

4.1 Introduction

4.2 Experimental

4.3 Auger Depth Profiles by O₂⁺ and Ar⁺ Ion Sputtering

4.4 Factor Analysis for Oxygen Profile

4.5 Summary

Chapter5.Dynamic Processes of Sputter-cone Formation on InP(lOO)

5.1 Introduction

5.2 Experimental

5.3 Auger and ISS Depth Profiling

5.4 ISS Measurement and REM/RHEED Observation under Ion Bombardment

5.5 Discussion

5.6 Summary

Chapter6.Conclusion

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