Nitric acid oxidation of silicon at 〜 120℃ to form 3.5-nm SiO_2/Si structure with good electrical characteristics
Bibliographic Information
- Title
- Nitric acid oxidation of silicon at 〜 120℃ to form 3.5-nm SiO_2/Si structure with good electrical characteristics
- Author
- Asuha
Journal
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- Applied Physics Letters 85
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Applied Physics Letters 85 3783-3785, 2004
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Details 詳細情報について
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- CRID
- 1010000781591474176
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- Article Type
- journal article
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- Data Source
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- KAKEN