Nitric acid oxidation of silicon at 〜 120℃ to form 3.5-nm SiO_2/Si structure with good electrical characteristics
書誌事項
- タイトル
- Nitric acid oxidation of silicon at 〜 120℃ to form 3.5-nm SiO_2/Si structure with good electrical characteristics
- 著者
- Asuha
収録刊行物
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- Applied Physics Letters 85
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Applied Physics Letters 85 3783-3785, 2004
