Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(100) substrates
書誌事項
- タイトル
- Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(100) substrates
- 著者
- Jungheum Yun, T.Takahashi, Y.Ishida, H.Okumura
収録刊行物
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- Journal of Crystal Growth (ELSEVIER) 掲載予定
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Journal of Crystal Growth (ELSEVIER) 掲載予定
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詳細情報
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- CRID
- 1010000781605401473
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- 資料種別
- journal article
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- データソース種別
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- KAKEN